用“HEMT”造句大全,HEMT造句
Study on AlGaN/GaN HEMT with Long Gate-Width and High Output Power at X Band
Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.
由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。
Microwave Power Characteristics of AlGaN/GaN HEMT;
Electromechanical Coupled Model on 2DEG in AlGaN/GaN HEMT
Low Noise Amplifier Design Based on GaAs HEMT;
Optimization on gate-recessed AlGaN/GaN HEMT with low damage etching technique
一种高*能的Q波段单片HEMT收发芯片已改进用于毫米波商用数字无线电系统。
The Research of RTD/HEMT/MSM s Optoelectrical Integration;
Study on the Key Fabrication Techniques of High-Power AlGaN/GaN HEMT;
高电子迁移率晶体管(HEMT)是基于异质结调制掺杂发展起来的一种高频高速半导体器件。
Schottky Characteristic of High Performance AlGaN/GaN HEMT
Fujitsu points out that using GaN HEMT technology allows more than 6 times the output power of existing amplifiers using gallium-arsenide (GaAs) transistors.
Development and Application of InP HEMT and InP HBT
A New AIGaN/GaN HEMT Design
The Ohmic Contacts to GaN HEMT Epilayers and Its Applications to Hall Measurements;
一般来说,功率管器件的欧姆接触触点以及栅极是采用金材料制作,但是在基于GaN的HEMT中如果仍采用金材料制作这些结构则必须采用特殊的CMOS制程工艺。